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Figure 4(a)Typical C V characteristics as a function of Zr and Al contents for Al metal/mixed ZAO/p type Si (Al/ZAO/Si) MOS capacitors and (b) hysteresis characteristics of the normalized C V curves for the same samples shown in figure (a) and for MOS capacitors with stacked ZAO bilayer dielectrics at 100kHz. Figure 4(a) indicates that the Cox at V=10V in the strong accumulation region decreases with increasing Al content.www.cheap-jerseys-sale.com The r values were estimated using the result in Fig.

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